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| PHOTOMULTlPLlER TUBES R2693, R2693P Transmission Mode Low Noise Bialkali Photocathode 28mm (1-1/8 inch) Diameter, Side-on Type FEATURES Low Dark Current Low Dark Counts (R2693P) Wide Photocathode Excellent Spatial Uniformity Fast Time Response APPLICATIONS Fluorescence Detector Chemiluminescence Detector Raman Spectroscopy Emission Spectroscopy Light Scattering Detector GENERAL Parameter Spectral Response Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material Dynode Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base SuitabIe Socket Applicable Socket Assembly Description 185 to 650 375 Low noise bialkali 16(H) 18(W) UV glass Circular-cage 9 1.2 3.4 11-pin base JEDEC No. B11-88 E678-11A (option) E717-21 (option) Unit nm nm Figure 1: Electron Trajectories LIGHT mm PHOTOELECTRONS PHOTOCATHODE GLASS BULB pF pF 2nd DYNODE FOCUSING ELECTRODES 1st DYNODE 3rd DYNODE TPMSC0003EB Figure 2: Typical Spatial Uniformity X-Axis RELATIVE SENSITIVITY (%) 100 80 60 40 20 0 8 4 0 4 8 9 4.5 0 4.5 9 Y-Axis 100 80 60 40 20 0 Y SPOTSIZE : 1mm DIA SUPPLY VOLTAGE : 1000V WAVELENGTH : 400nm X DISTANCE FROM CENTER OF PHOTOCATHODE (mm) DISTANCE FROM CENTER OF PHOTOCATHODE (mm) TPMSB0066EA Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c) 1993 Hamamatsu Photonics K.K. RELATIVE SENSITIVITY (%) PHOTOMULTlPLlER TUBES R2693, R2693P MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Voltage Average Anode Current Ambient Temperature Between Anode and Cathode Between Anode and Last Dynode A Value 1250 250 0.1 -80 to +50 Unit Vdc Vdc mA CHARACTERISTlCS (at 25 Parameter Cathode Sensitivity Anode Sensitivity Gain D ) R2693 for General Purpose Min. Typ. Max. 30 20.5 50 62 7.0 300 3.7 105 6 106 0.5 5.0 R2693P for Photon Counting Min. Typ. Max. 30 20.5 50 62 7.0 300 3.7 105 6 106 0.1 15 2.0 50 Unit % A/lm mA/W A/lm-b A/lm A/W Quantum Efficiency at 375nm Luminous B Radiant at 375nm (Peak) Blue C Luminous D Radiant at 375nm 100 100 Anode Dark Current E (After 30min. storage in darkness) Anode Dark Counts E ENI(Equivalent Noise Input) F D nA cps W ns ns ns % % 8.6 G H J Time Response Anode Current Stability K Anode Pulse Rise Time Electron Transit Time Current Hysteresis Voltage Hysteresis Transit Time Spread (FWHM) 10-17 1.2 18 1.0 0.5 1.0 3.9 10-17 1.2 18 1.0 0.5 1.0 NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1:Voltage Distribution Ratio G:The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. H: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated. J: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the single photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. K: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. li lmin. 100(%) R2693 Electrodes Ratio Electrodes Ratio K Dy1 Dy2 Dy3 * * * * Dy9 P 1 1 1 ********1 1 K Dy1 Dy2 Dy3 * * * * Dy9 P 2.5 1.5 1 * * * * * * * * 1 1 R2693P ANODE CURRENT SuppIy Voltage : 1000Vdc, K : Cathode,Dy : Dynode, P : Anode li l max. l min. TIME E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G. S q = Electronic charge (1.60 10-19 coulomb). ldb = Anode dark current(after 30 minutes storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. f 0 5 6 7 (minutes) TPMSB0002EA (1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 microampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro -ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Figure 3: Typical Spectral Response 100 TPMSB0060EA Figure 4: Typical Time Response 200 TPMSB0061EA CATHODE RADIANT SENSITIVITY CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 100 80 60 10 QUANTUM EFFICIENCY TIME (ns) 40 TRAN 20 SIT TIM E 1 10 8 6 0.1 4 2 RISE 300 500 700 TIME 1000 1500 0.01 1 200 400 600 800 WAVELENGTH (nm) SUPPLY VOLTAGE (V) Figure 5: Typical Gain and Anode Dark Current (R2693) 108 TPMSB0062EA Figure 6: Typical Single Photoelectron Pulse Height Distribution (R2693P) 1.0 TPMSB0063EA 10-5 107 10-6 FULL SCALE(SIGNAL+DARK):1 10 4 FULL SCALE(DARK) :1 10 3 0.8 SIGNAL+DARK ANODE DARK CURRENT(A) 106 10-7 COUNTS PER CHANNEL 105 GAIN G AI N 10-8 0.6 AR K C U R R 104 EN T 0.4 10-9 WAVELENGTH OF INCIDENT LIGHT : 400nm SUPPLY VOLTAGE : 1000vdc SIGNAL+DARK COUNTS : 5364cps DARK COUNTS : 15cps AMBIENT TEMPERATURE : +25 AN O D E 103 10-10 D 0.2 DARK 102 10-11 0 0 200 400 600 800 1000 CHANNEL NUMBER(ch) DISCRIMINATION LEVEL 101 300 400 500 600 800 1000 10-12 1300 SUPPLY VOLTAGE(V) Figure 7: Typical Temperature Coefficient of Anode Sensitivity +1.2 +0.8 ) TEMPERATURE COEFFICIENT(%/ TPMSB0064EA Figure 8: Typical Temperature Characteristics of Dark Current(R2693) (at 1000V, after 30minutes storage) 100 TPMSB0065EA 10 +0.4 0 ANODE DARK CURRENT (nA) 1 -0.4 0.1 -0.8 -1.2 200 300 400 500 600 700 0.01 0 20 40 60 TEMPERATURE (C) 80 100 WAVELENGTH (nm) PHOTOMULTlPLlER TUBES R2693, R2693P Figure 9: Dimensional Outline and Basing Diagram (Unit: mm) 29.0 1.7 18MIN. PHOTOCATHODE 16MIN. 76MAX. 90MAX. 2.5 DY5 DY4 4 DY3 3 DY2 2 5 DY6 6 7 DY7 8 DY8 9 DY9 10 P 49.0 1 11 K DY1 DIRECTION OF LIGHT 34MAX. HA COATING 11 PIN BASE JEDEC No. B11-88 BOTTOM VIEW (BASING DIAGRAM) TPMSA0007EA Figure 10: Optional Accessories (Unit: mm) Socket E678-11A 49 38 33.0 0.3 3.5 5 D Type Socket Assembly E717-21 PMT P R10 DY9 38.0 0.3 49.0 0.3 DY8 DY7 DY6 DY5 31.0 0.5 HOUSING (INSULATOR) POTTING COMPOUND DY4 DY3 DY2 DY1 K 9 R9 8 R8 7 R7 6 5 4 R4 3 R3 450 10 2 R2 1 R1 11 -HV SOCKET PIN No. 10 C3 C2 C1 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK) 3.5 33 29 4.8 R6 R to R10 : 330k C1 to C3 : 0.01 F R5 5 29 4 41.0 0.5 AWG22 (VIOLET) 18 R1 to R10 : 330k C1 to C3 : 0.01 F TACCA0002ED TACCA0008EB Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning-Personal Safety Hazards Electrical Shock-Operating voltages applied to this device present a shock hazard. HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Farogatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741 TPMS1014E01 MAR. 1993 |
Price & Availability of R2693P
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